Difference between revisions of "transistors"

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== Diodes ==
 
== Diodes ==
1N4148 and 1N4001
+
 
 +
1N4148 and 1N4001, 1N4002, etc.
 +
 
 +
BY229 (fast switching diode suitable for freewheeling diode)
 +
 
 +
== Optoisolators ==
 +
 
 +
PC817

Revision as of 00:25, 4 October 2014


Common Transistors

Bipolar transistors
2N3055: old fashioned, high power switching transistor. These days it almost never makes sense to use a 2N3055 when a MOSFET or IGBT could be used instead.

Bipolar junction: 2N2222, 2N3904, and 2N3906

MOSFET: BS170 and 2N7000

The BS170 is nearly identical to the 2N7000, but handles over twice the power.

max voltage
60 V
max current
200 mA (2N7000) or 500 mA (BS170)
max power
400 mW (2N7000) or 883 mW (BS170)
on resistance
5 Ω at 10 V Vgs
off leakage current
10 nA (10e-9 A, or 0.00000001 Amps)

MOSFET IRF510

This is a very popular high power MOSET.

max voltage
100 V
max current
5.6 A, but at 100 ℃: 4 A
on resistance
0.54 Ω at 10 V Vgs

MOSFET BUK95/9629-100B

This is a pretty awesome MOSFET. N-channel enhancement mode field-effect power transistor

max voltage
100 V
max current
46 A
on resistance
24 mΩ
Vthreshold
2 V
ideal for 12 V, 24 V and 42 V loads

IGBTs: 25N120, 30N120

Diodes

1N4148 and 1N4001, 1N4002, etc.

BY229 (fast switching diode suitable for freewheeling diode)

Optoisolators

PC817