transistors

reverse blocking diode

STPS2L60 Power Schottky Rectifier

Low voltage drop. Handles moderately high power loads. low reverse leakage current.

Common Transistors

Bipolar transistors

2N3055: old fashioned, high power switching transistor. These days it almost never makes sense to use a 2N3055 when a MOSFET or IGBT could be used instead.

Bipolar junction: 2N2222, 2N3904, and 2N3906

BC547: You find this transistor used often in European publications. The 2N3904 makes a good substitution for the BC547B transistor.

MOSFET: BS170 and 2N7000

The BS170 is nearly identical to the 2N7000, but handles over twice the power.

max voltage

60 V

max current

500 mA (BS170), 200 mA (2N7000)

max power

883 mW (BS170), 400 mW (2N7000)

on resistance

5 Ω at 10 V Vgs

off leakage current

10 nA (10e-9 A, or 0.00000001 Amps)

MOSFET IRFZ44N

This is a popular high power MOSTFET (HEXFET).

V_DSS

55 V

I_D

49 A

R_DS(on)

17.5 mΩ

MOSFET IRF510

This is a popular high power MOSFET (see also, IRFZ44N, for a more powerful, robust alternative).

max voltage

100 V

max current

5.6 A, but at 100 ℃: 4 A

on resistance

0.54 Ω at 10 V Vgs

MOSFET BUK95/9629-100B

This is a pretty awesome MOSFET. N-channel enhancement mode field-effect power transistor

max voltage

100 V

max current

46 A

on resistance

24 mΩ

Vthreshold

2 V

ideal for 12 V, 24 V and 42 V loads

Diodes

1N4148 and 1N4001, 1N4002, etc.

BY229 (fast switching diode suitable for freewheeling diode)

Optoisolators

PC817