transistors
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Revision as of 20:59, 6 October 2014 by Root (talk | contribs) (→Bipolar junction: 2N2222, 2N3904, and 2N3906)
Contents
Common Transistors
- Bipolar transistors
- 2N3055: old fashioned, high power switching transistor. These days it almost never makes sense to use a 2N3055 when a MOSFET or IGBT could be used instead.
Bipolar junction: 2N2222, 2N3904, and 2N3906
BC547: You find this transistor used often in European publications. The 2N3904 makes a good substitution for the BC547B transistor.
MOSFET: BS170 and 2N7000
The BS170 is nearly identical to the 2N7000, but handles over twice the power.
- max voltage
- 60 V
- max current
- 200 mA (2N7000) or 500 mA (BS170)
- max power
- 400 mW (2N7000) or 883 mW (BS170)
- on resistance
- 5 Ω at 10 V Vgs
- off leakage current
- 10 nA (10e-9 A, or 0.00000001 Amps)
MOSFET IRF510
This is a very popular high power MOSET.
- max voltage
- 100 V
- max current
- 5.6 A, but at 100 ℃: 4 A
- on resistance
- 0.54 Ω at 10 V Vgs
MOSFET BUK95/9629-100B
This is a pretty awesome MOSFET. N-channel enhancement mode field-effect power transistor
- max voltage
- 100 V
- max current
- 46 A
- on resistance
- 24 mΩ
- Vthreshold
- 2 V
- ideal for 12 V, 24 V and 42 V loads
IGBTs: 25N120, 30N120
Diodes
1N4148 and 1N4001, 1N4002, etc.
BY229 (fast switching diode suitable for freewheeling diode)
Optoisolators
PC817
